SSM6N813R,LXHF

Toshiba Semiconductor · Automotive, AEC-Q101 Series

MOSFET 2N-CH 100V 3.5A 6TSOPF

Toshiba Semiconductor SSM6N813R,LXHF
Download datasheet (PDF)
[IN STOCK] In Stock: 25 pcs
$1.47/ pc

Volume pricing

Buy Now

MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

SSM6N813R,LXHF specifications
Parameter / AttributeSpecification / Value
SeriesAutomotive, AEC-Q101
FET type2 N-Channel (Dual)
MountingSurface Mount
Drain to source voltage100V
Current - continuous drain (Id) @ 25°C3.5A (Ta)
Power - max1.5W (Ta)
Operating temperature175°C
PackageTape & Reel (TR); Cut Tape (CT)
FET featureLogic Level Gate, 4.5V Drive
Case6-SMD, Flat Leads
Vgs(th) (Max) @ id2.5V @ 100µA
Rds on (Max) @ id, vgs112mOhm @ 3.5A, 10V
Gate charge (Qg) (Max) @ vgs3.6nC @ 4.5V
Input capacitance (Ciss) (Max) @ vds242pF @ 15V
SSM6N813R,LXHF
[ALLOC] verified
Quote