SSM6N7002BFE,LM

Toshiba Semiconductor

MOSFET 2N-CH 60V 0.2A ES6

SSM6N7002BFE~6LM
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MOQ 5 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

SSM6N7002BFE,LM specifications
Parameter / AttributeSpecification / Value
FET type2 N-Channel (Dual)
MountingSurface Mount
Drain to source voltage60V
Current - continuous drain (Id) @ 25°C200mA
Power - max150mW
Operating temperature150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
FET featureLogic Level Gate
CaseSOT-563, SOT-666
Vgs(th) (Max) @ id3.1V @ 250µA
Rds on (Max) @ id, vgs2.1Ohm @ 500mA, 10V
Input capacitance (Ciss) (Max) @ vds17pF @ 25V
SSM6N7002BFE,LM
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