SSM6N68NU,LF

Toshiba Semiconductor

SMALL LOW RON DUAL NCH MOSFETS H

Toshiba Semiconductor SSM6N68NU,LF
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MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

SSM6N68NU,LF specifications
Parameter / AttributeSpecification / Value
FET type2 N-Channel (Dual)
MountingSurface Mount
Drain to source voltage30V
Current - continuous drain (Id) @ 25°C4A (Ta)
Power - max2W (Ta)
Operating temperature150°C
PackageTape & Reel (TR); Cut Tape (CT)
FET featureLogic Level Gate, 1.8V Drive
Case6-WDFN Exposed Pad
Vgs(th) (Max) @ id1V @ 1mA
Rds on (Max) @ id, vgs84mOhm @ 2A, 4.5V
Gate charge (Qg) (Max) @ vgs1.8nC @ 4.5V
Input capacitance (Ciss) (Max) @ vds129pF @ 15V
SSM6N68NU,LF
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