SSM6N62TU,LF

Toshiba Semiconductor

SMALL SIGNAL MOSFET N-CH X 2 VDS

Toshiba Semiconductor SSM6N62TU,LF
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[IN STOCK] In Stock: 680 pcs
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MOQ 5 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

SSM6N62TU,LF specifications
Parameter / AttributeSpecification / Value
FET type2 N-Channel (Dual)
MountingSurface Mount
Drain to source voltage20V
Current - continuous drain (Id) @ 25°C800mA (Ta)
Power - max500mW (Ta)
Operating temperature150°C
PackageTape & Reel (TR); Cut Tape (CT)
FET featureLogic Level Gate, 1.2V Drive
Case6-SMD, Flat Leads
Vgs(th) (Max) @ id1V @ 1mA
Rds on (Max) @ id, vgs85mOhm @ 800mA, 4.5V
Gate charge (Qg) (Max) @ vgs2nC @ 4.5V
Input capacitance (Ciss) (Max) @ vds177pF @ 10V
SSM6N62TU,LF
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