Toshiba Semiconductor SSM6N56FE,LM
MPNSSM6N56FE,LM
End of Life
MOSFET 2N-CH 20V 0.8A ES6
$0.46Ref. price · indicative, final on quote
PackagingSOT-563, SOT-666
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| Mounting | Surface Mount |
| Drain to source voltage | 20V |
| Current - continuous drain (Id) @ 25°C | 800mA |
| Power - max | 150mW |
| Operating temperature | 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Technology | MOSFET (Metal Oxide) |
| FET feature | Logic Level Gate, 1.5V Drive |
| Configuration | 2 N-Channel (Dual) |
| Case | SOT-563, SOT-666 |
| Vgs(th) (Max) @ id | 1V @ 1mA |
| Rds on (Max) @ id, vgs | 235mOhm @ 800mA, 4.5V |
| Gate charge (Qg) (Max) @ vgs | 1nC @ 4.5V |
| Input capacitance (Ciss) (Max) @ vds | 55pF @ 10V |