SSM6N55NU,LF
Toshiba Semiconductor
MOSFET 2N-CH 30V 4A 6DFN
[IN STOCK] In Stock: 105 pcs
MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T
Technical specifications
| Parameter / Attribute | Specification / Value |
|---|---|
| Mounting | Surface Mount |
| Drain to source voltage | 30V |
| Current - continuous drain (Id) @ 25°C | 4A |
| Power - max | 1W |
| Operating temperature | 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Technology | MOSFET (Metal Oxide) |
| FET feature | Logic Level Gate |
| Configuration | 2 N-Channel (Dual) |
| Case | 6-WDFN Exposed Pad |
| Vgs(th) (Max) @ id | 2.5V @ 100µA |
| Rds on (Max) @ id, vgs | 46mOhm @ 4A, 10V |
| Gate charge (Qg) (Max) @ vgs | 2.5nC @ 4.5V |
| Input capacitance (Ciss) (Max) @ vds | 280pF @ 15V |
SSM6N55NU,LF
[ALLOC] verified