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Toshiba Semiconductor SSM6N35FE,LM

SSM6N35FE,LM

MPNSSM6N35FE,LM
End of Life

MOSFET 2N-CH 20V 0.18A ES6

$0.38Ref. price · indicative, final on quote
PackagingSOT-563, SOT-666
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

SSM6N35FE,LM specifications
ParameterValue
MountingSurface Mount
Drain to source voltage20V
Current - continuous drain (Id) @ 25°C180mA
Power - max150mW
Operating temperature150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
TechnologyMOSFET (Metal Oxide)
FET featureLogic Level Gate
Configuration2 N-Channel (Dual)
CaseSOT-563, SOT-666
Vgs(th) (Max) @ id1V @ 1mA
Rds on (Max) @ id, vgs3Ohm @ 50mA, 4V
Input capacitance (Ciss) (Max) @ vds9.5pF @ 3V