SSM6N35AFE,LF - Toshiba Semiconductor
MPNSSM6N35AFE,LF
End of Life
MOSFET 2N-CH 20V 0.25A ES6
$0.38Ref. price · indicative, final on quote
PackagingSOT-563, SOT-666
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| FET type | 2 N-Channel (Dual) |
| Mounting | Surface Mount |
| Drain to source voltage | 20V |
| Current - continuous drain (Id) @ 25°C | 250mA (Ta) |
| Power - max | 250mW |
| Operating temperature | 150°C |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| FET feature | Logic Level Gate, 1.2V Drive |
| Case | SOT-563, SOT-666 |
| Vgs(th) (Max) @ id | 1V @ 100µA |
| Rds on (Max) @ id, vgs | 1.1Ohm @ 150mA, 4.5V |
| Gate charge (Qg) (Max) @ vgs | 0.34nC @ 4.5V |
| Input capacitance (Ciss) (Max) @ vds | 36pF @ 10V |