SSM6N16FUTE85LF
Toshiba Semiconductor
MOSFET 2N-CH 20V 0.1A US6
[IN STOCK] In Stock: 95 pcs
MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T
Technical specifications
| Parameter / Attribute | Specification / Value |
|---|---|
| Mounting | Surface Mount |
| Drain to source voltage | 20V |
| Current - continuous drain (Id) @ 25°C | 100mA |
| Power - max | 200mW |
| Operating temperature | 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Technology | MOSFET (Metal Oxide) |
| Configuration | 2 N-Channel (Dual) |
| Case | 6-TSSOP, SC-88, SOT-363 |
| Vgs(th) (Max) @ id | 1.1V @ 100µA |
| Rds on (Max) @ id, vgs | 3Ohm @ 10mA, 4V |
| Input capacitance (Ciss) (Max) @ vds | 9.3pF @ 3V |
SSM6N16FUTE85LF
[ALLOC] verified