SSM6N15AFU,LF

Toshiba Semiconductor

MOSFET 2N-CH 30V 0.1A 2-2J1C

Toshiba Semiconductor SSM6N15AFU,LF
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MOQ 5 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

SSM6N15AFU,LF specifications
Parameter / AttributeSpecification / Value
FET type2 N-Channel (Dual)
MountingSurface Mount
Drain to source voltage30V
Current - continuous drain (Id) @ 25°C100mA
Power - max300mW
Operating temperature150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
FET featureLogic Level Gate
Case6-TSSOP, SC-88, SOT-363
Vgs(th) (Max) @ id1.5V @ 100µA
Rds on (Max) @ id, vgs3.6Ohm @ 10mA, 4V
Input capacitance (Ciss) (Max) @ vds13.5pF @ 3V
SSM6N15AFU,LF
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