SSM6N15AFE,LM
Toshiba Semiconductor
MOSFET 2N-CH 30V 0.1A ES6
[IN STOCK] In Stock: 487 pcs
MOQ 5 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T
Technical specifications
| Parameter / Attribute | Specification / Value |
|---|---|
| Mounting | Surface Mount |
| Drain to source voltage | 30V |
| Current - continuous drain (Id) @ 25°C | 100mA |
| Power - max | 150mW |
| Operating temperature | 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Technology | MOSFET (Metal Oxide) |
| FET feature | Logic Level Gate |
| Configuration | 2 N-Channel (Dual) |
| Case | SOT-563, SOT-666 |
| Vgs(th) (Max) @ id | 1.5V @ 100µA |
| Rds on (Max) @ id, vgs | 4Ohm @ 10mA, 4V |
| Input capacitance (Ciss) (Max) @ vds | 13.5pF @ 3V |
SSM6N15AFE,LM
[ALLOC] verified