SSM6L40TU,LF

Toshiba Semiconductor

MOSFET N/P-CH 30V 1.6A UF6

Toshiba Semiconductor SSM6L40TU,LF
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MOQ 5 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

SSM6L40TU,LF specifications
Parameter / AttributeSpecification / Value
MountingSurface Mount
Drain to source voltage30V
Current - continuous drain (Id) @ 25°C1.6A (Ta), 1.4A (Ta)
Power - max500mW (Ta)
Operating temperature150°C
PackageTape & Reel (TR); Cut Tape (CT)
TechnologyMOSFET (Metal Oxide)
FET featureLogic Level Gate, 4V Drive
ConfigurationN and P-Channel
Case6-SMD, Flat Leads
Vgs(th) (Max) @ id2.6V @ 1mA, 2V @ 1mA
Rds on (Max) @ id, vgs122mOhm @ 1A, 10V, 226mOhm @ 1A, 10V
Gate charge (Qg) (Max) @ vgs5.1nC @ 10V, 2.9nC @ 10V
Input capacitance (Ciss) (Max) @ vds180pF @ 15V, 120pF @ 15V
SSM6L40TU,LF
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