SSM6L39TU,LF

Toshiba Semiconductor

MOSFET N/P-CH 20V 0.8A UF6

Toshiba Semiconductor SSM6L39TU,LF
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[IN STOCK] In Stock: 49 pcs
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MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

SSM6L39TU,LF specifications
Parameter / AttributeSpecification / Value
MountingSurface Mount
Drain to source voltage20V
Current - continuous drain (Id) @ 25°C800mA
Power - max500mW
Operating temperature150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
TechnologyMOSFET (Metal Oxide)
FET featureLogic Level Gate, 1.8V Drive
ConfigurationN and P-Channel
Case6-SMD, Flat Leads
Vgs(th) (Max) @ id1V @ 1mA
Rds on (Max) @ id, vgs143mOhm @ 600MA, 4V
Input capacitance (Ciss) (Max) @ vds268pF @ 10V
SSM6L39TU,LF
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