SSM6L36FE,LM

Toshiba Semiconductor

MOSFET N/P-CH 20V 0.5A/0.33A ES6

Toshiba Semiconductor SSM6L36FE,LM
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MOQ 5 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

SSM6L36FE,LM specifications
Parameter / AttributeSpecification / Value
MountingSurface Mount
Drain to source voltage20V
Current - continuous drain (Id) @ 25°C500mA, 330mA
Power - max150mW
Operating temperature150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
TechnologyMOSFET (Metal Oxide)
FET featureLogic Level Gate
ConfigurationN and P-Channel
CaseSOT-563, SOT-666
Vgs(th) (Max) @ id1V @ 1mA
Rds on (Max) @ id, vgs630mOhm @ 200mA, 5V
Gate charge (Qg) (Max) @ vgs1.23nC @ 4V
Input capacitance (Ciss) (Max) @ vds46pF @ 10V
SSM6L36FE,LM
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