SSM6L35FU(TE85L,F)

Toshiba Semiconductor

MOSFET N/P-CH 20V 0.18A/0.1A US6

Toshiba Semiconductor SSM6L35FU(TE85L,F)
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[IN STOCK] In Stock: 170 pcs
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MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

SSM6L35FU(TE85L,F) specifications
Parameter / AttributeSpecification / Value
MountingSurface Mount
Drain to source voltage20V
Current - continuous drain (Id) @ 25°C180mA, 100mA
Power - max200mW
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
TechnologyMOSFET (Metal Oxide)
FET featureLogic Level Gate, 1.2V Drive
ConfigurationN and P-Channel
Case6-TSSOP, SC-88, SOT-363
Vgs(th) (Max) @ id1V @ 1mA
Rds on (Max) @ id, vgs3Ohm @ 50mA, 4V
Input capacitance (Ciss) (Max) @ vds9.5pF @ 3V
SSM6L35FU(TE85L,F)
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