SSM6L35FE,LM
Toshiba Semiconductor
MOSFET N/P-CH 20V 0.18A/0.1A ES6
[IN STOCK] In Stock: 120 pcs
MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T
Technical specifications
| Parameter / Attribute | Specification / Value |
|---|---|
| Mounting | Surface Mount |
| Drain to source voltage | 20V |
| Current - continuous drain (Id) @ 25°C | 180mA, 100mA |
| Power - max | 150mW |
| Operating temperature | 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Technology | MOSFET (Metal Oxide) |
| FET feature | Logic Level Gate |
| Configuration | N and P-Channel |
| Case | SOT-563, SOT-666 |
| Vgs(th) (Max) @ id | 1V @ 1mA |
| Rds on (Max) @ id, vgs | 3Ohm @ 50mA, 4V |
| Input capacitance (Ciss) (Max) @ vds | 9.5pF @ 3V |
SSM6L35FE,LM
[ALLOC] verified