Toshiba Semiconductor SSM6K819R,LF
MPNSSM6K819R,LF
End of Life
N-CH MOSFET, 100 V, 10 A, 0.0258
$0.65Ref. price · indicative, final on quote
Packaging6-SMD, Flat Leads
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 100 V |
| Drive voltage (Max rds on, min rds on) | 4.5V, 10V |
| Current - continuous drain (Id) @ 25°C | 10A (Ta) |
| Power dissipation | 1.5W (Ta) |
| Operating temperature | 175°C |
| Grade | Automotive |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Qualification | AEC-Q101 |
| Case | 6-SMD, Flat Leads |
| Vgs(th) (Max) @ id | 2.5V @ 100µA |
| Rds on (Max) @ id, vgs | 25.8mOhm @ 4A, 10V |
| Gate charge (Qg) (Max) @ vgs | 8.5 nC @ 4.5 V |
| Input capacitance (Ciss) (Max) @ vds | 1110 pF @ 15 V |