SSM6K818R,LF
Toshiba Semiconductor
N-CH MOSFET 30V, +/-20V, 15A ,0.
[IN STOCK] In Stock: 46 pcs
MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T
Technical specifications
| Parameter / Attribute | Specification / Value |
|---|---|
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 30 V |
| Drive voltage (Max rds on, min rds on) | 4.5V, 10V |
| Current - continuous drain (Id) @ 25°C | 15A (Ta) |
| Power dissipation | 1.5W (Ta) |
| Operating temperature | 150°C |
| Grade | Automotive |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Qualification | AEC-Q101 |
| Case | 6-SMD, Flat Leads |
| Vgs(th) (Max) @ id | 2.1V @ 100µA |
| Rds on (Max) @ id, vgs | 12mOhm @ 4A, 4.5V |
| Gate charge (Qg) (Max) @ vgs | 7.5 nC @ 4.5 V |
| Input capacitance (Ciss) (Max) @ vds | 1130 pF @ 15 V |
SSM6K818R,LF
[ALLOC] verified