SSM6K518NU,LF
Toshiba Semiconductor
MOSFET N-CH 20V 6A 6UDFNB
[IN STOCK] In Stock: 22 pcs
MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T
Technical specifications
| Parameter / Attribute | Specification / Value |
|---|---|
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 20 V |
| Drive voltage (Max rds on, min rds on) | 1.5V, 4.5V |
| Current - continuous drain (Id) @ 25°C | 6A (Ta) |
| Power dissipation | 1.25W (Ta) |
| Operating temperature | 150°C |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±8V |
| Technology | MOSFET (Metal Oxide) |
| Case | 6-WDFN Exposed Pad |
| Vgs(th) (Max) @ id | 1V @ 1mA |
| Rds on (Max) @ id, vgs | 33mOhm @ 4A, 4.5V |
| Gate charge (Qg) (Max) @ vgs | 3.6 nC @ 4.5 V |
| Input capacitance (Ciss) (Max) @ vds | 410 pF @ 10 V |
SSM6K518NU,LF
[ALLOC] verified