Toshiba Semiconductor SSM6K516NU,LF
MPNSSM6K516NU,LF
End of Life
MOSFET N-CH 30V 6A 6UDFNB
$0.41Ref. price · indicative, final on quote
Packaging6-WDFN Exposed Pad
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 30 V |
| Drive voltage (Max rds on, min rds on) | 4.5V, 10V |
| Current - continuous drain (Id) @ 25°C | 6A (Ta) |
| Power dissipation | 1.25W (Ta) |
| Operating temperature | 150°C |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | +20V, -12V |
| Technology | MOSFET (Metal Oxide) |
| Case | 6-WDFN Exposed Pad |
| Vgs(th) (Max) @ id | 2.5V @ 100µA |
| Rds on (Max) @ id, vgs | 46mOhm @ 4A, 10V |
| Gate charge (Qg) (Max) @ vgs | 2.5 nC @ 4.5 V |
| Input capacitance (Ciss) (Max) @ vds | 280 pF @ 15 V |