SSM6K514NU,LF

Toshiba Semiconductor · U-MOSIX-H Series

MOSFET N-CH 40V 12A 6UDFNB

Toshiba Semiconductor SSM6K514NU,LF
[IN STOCK] In Stock: 1,480 pcs
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MOQ 5 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

SSM6K514NU,LF specifications
Parameter / AttributeSpecification / Value
SeriesU-MOSIX-H
FET typeN-Channel
MountingSurface Mount
Drain to source voltage40 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C12A (Ta)
Power dissipation2.5W (Ta)
Operating temperature150°C
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
Case6-WDFN Exposed Pad
Vgs(th) (Max) @ id2.4V @ 100µA
Rds on (Max) @ id, vgs11.6mOhm @ 4A, 10V
Gate charge (Qg) (Max) @ vgs7.5 nC @ 4.5 V
Input capacitance (Ciss) (Max) @ vds1110 pF @ 20 V
SSM6K514NU,LF
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