Toshiba Semiconductor SSM6K361NU,LF
MPNSSM6K361NU,LF
End of Life
MOSFET N-CH 100V 3.5A 6UDFNB
$0.45Ref. price · indicative, final on quote
Packaging6-WDFN Exposed Pad
RoHSROHS3 Compliant
SeriesU-MOSVIII-H
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| Series | U-MOSVIII-H |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 100 V |
| Drive voltage (Max rds on, min rds on) | 4.5V, 10V |
| Current - continuous drain (Id) @ 25°C | 3.5A (Ta) |
| Power dissipation | 1.25W (Ta) |
| Operating temperature | 150°C |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | 6-WDFN Exposed Pad |
| Vgs(th) (Max) @ id | 2.5V @ 100µA |
| Rds on (Max) @ id, vgs | 69mOhm @ 2A, 10V |
| Gate charge (Qg) (Max) @ vgs | 3.2 nC @ 4.5 V |
| Input capacitance (Ciss) (Max) @ vds | 430 pF @ 15 V |