SSM6K217FE~6LF
Toshiba Semiconductor SSM6K217FE,LF
MPNSSM6K217FE,LF
End of Life
MOSFET N-CH 40V 1.8A ES6
$0.37Ref. price · indicative, final on quote
PackagingSOT-563, SOT-666
RoHSROHS3 Compliant
SeriesU-MOSVII-H
Sourced new & surplus through independent channelsAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| Series | U-MOSVII-H |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 40 V |
| Drive voltage (Max rds on, min rds on) | 1.8V, 8V |
| Current - continuous drain (Id) @ 25°C | 1.8A (Ta) |
| Power dissipation | 500mW (Ta) |
| Operating temperature | 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±12V |
| Technology | MOSFET (Metal Oxide) |
| Case | SOT-563, SOT-666 |
| Vgs(th) (Max) @ id | 1.2V @ 1mA |
| Rds on (Max) @ id, vgs | 195mOhm @ 1A, 8V |
| Gate charge (Qg) (Max) @ vgs | 1.1 nC @ 4.2 V |
| Input capacitance (Ciss) (Max) @ vds | 130 pF @ 10 V |