SSM6K217FE,LF
Toshiba Semiconductor · U-MOSVII-H Series
MOSFET N-CH 40V 1.8A ES6
SSM6K217FE~6LF
[IN STOCK] In Stock: 2,017 pcs
MOQ 5 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T
Technical specifications
| Parameter / Attribute | Specification / Value |
|---|---|
| Series | U-MOSVII-H |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 40 V |
| Drive voltage (Max rds on, min rds on) | 1.8V, 8V |
| Current - continuous drain (Id) @ 25°C | 1.8A (Ta) |
| Power dissipation | 500mW (Ta) |
| Operating temperature | 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±12V |
| Technology | MOSFET (Metal Oxide) |
| Case | SOT-563, SOT-666 |
| Vgs(th) (Max) @ id | 1.2V @ 1mA |
| Rds on (Max) @ id, vgs | 195mOhm @ 1A, 8V |
| Gate charge (Qg) (Max) @ vgs | 1.1 nC @ 4.2 V |
| Input capacitance (Ciss) (Max) @ vds | 130 pF @ 10 V |
SSM6K217FE,LF
[ALLOC] verified