SSM6K211FE,LF - Toshiba Semiconductor
MPNSSM6K211FE,LF
End of Life
MOSFET N-CH 20V 3.2A ES6
$0.52Ref. price · indicative, final on quote
PackagingSOT-563, SOT-666
RoHSROHS3 Compliant
SeriesU-MOSIII
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| Series | U-MOSIII |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 20 V |
| Drive voltage (Max rds on, min rds on) | 1.5V, 4.5V |
| Current - continuous drain (Id) @ 25°C | 3.2A (Ta) |
| Power dissipation | 500mW (Ta) |
| Operating temperature | 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±10V |
| Technology | MOSFET (Metal Oxide) |
| Case | SOT-563, SOT-666 |
| Vgs(th) (Max) @ id | 1V @ 1mA |
| Rds on (Max) @ id, vgs | 47mOhm @ 2A, 4.5V |
| Gate charge (Qg) (Max) @ vgs | 10.8 nC @ 4.5 V |
| Input capacitance (Ciss) (Max) @ vds | 510 pF @ 10 V |