Toshiba Semiconductor SSM6J825R,LF
MPNSSM6J825R,LF
End of Life
P-CH MOSFET -30V, -20/+10V, -4A
$0.43Ref. price · indicative, final on quote
Packaging6-SMD, Flat Leads
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| FET type | P-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 30 V |
| Drive voltage (Max rds on, min rds on) | 4V, 10V |
| Current - continuous drain (Id) @ 25°C | 4A (Ta) |
| Power dissipation | 1.5W (Ta) |
| Operating temperature | 150°C |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | +10V, -20V |
| Technology | MOSFET (Metal Oxide) |
| Case | 6-SMD, Flat Leads |
| Vgs(th) (Max) @ id | 2V @ 250µA |
| Rds on (Max) @ id, vgs | 45mOhm @ 4A, 10V |
| Gate charge (Qg) (Max) @ vgs | 6.2 nC @ 4.5 V |
| Input capacitance (Ciss) (Max) @ vds | 492 pF @ 10 V |