SSM6J512NU,LF - Toshiba Semiconductor
MPNSSM6J512NU,LF
End of Life
MOSFET P-CH 12V 10A 6UDFNB
$0.46Ref. price · indicative, final on quote
Packaging6-WDFN Exposed Pad
RoHSROHS3 Compliant
SeriesU-MOSVII
Sourced new & surplus through independent channelsAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| Series | U-MOSVII |
| FET type | P-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 12 V |
| Drive voltage (Max rds on, min rds on) | 1.8V, 8V |
| Current - continuous drain (Id) @ 25°C | 10A (Ta) |
| Power dissipation | 1.25W (Ta) |
| Operating temperature | 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±10V |
| Technology | MOSFET (Metal Oxide) |
| Case | 6-WDFN Exposed Pad |
| Vgs(th) (Max) @ id | 1V @ 1mA |
| Rds on (Max) @ id, vgs | 16.2mOhm @ 4A, 8V |
| Gate charge (Qg) (Max) @ vgs | 19.5 nC @ 4.5 V |
| Input capacitance (Ciss) (Max) @ vds | 1400 pF @ 6 V |