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Toshiba Semiconductor SSM6J507NU,LF

SSM6J507NU,LF U-MOSVI P-CH 30V 10A 20mΩ 6-UDFNB

MPNSSM6J507NU,LF
End of Life

MOSFET P-CH 30V 10A 6UDFNB

$0.44Ref. price · indicative, final on quote
Packaging6-WDFN Exposed Pad
RoHSROHS3 Compliant
SeriesU-MOSVI
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

SSM6J507NU,LF specifications
ParameterValue
SeriesU-MOSVI
FET typeP-Channel
MountingSurface Mount
Drain to source voltage30 V
Drive voltage (Max rds on, min rds on)4V, 10V
Current - continuous drain (Id) @ 25°C10A (Ta)
Power dissipation1.25W (Ta)
Operating temperature150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs+20V, -25V
TechnologyMOSFET (Metal Oxide)
Case6-WDFN Exposed Pad
Vgs(th) (Max) @ id2.2V @ 250µA
Rds on (Max) @ id, vgs20mOhm @ 4A, 10V
Gate charge (Qg) (Max) @ vgs20.4 nC @ 4.5 V
Input capacitance (Ciss) (Max) @ vds1150 pF @ 15 V