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Toshiba Semiconductor SSM6J501NU,LF

SSM6J501NU,LF

MPNSSM6J501NU,LF
End of Life

MOSFET P-CH 20V 10A 6UDFNB

$0.49Ref. price · indicative, final on quote
Packaging6-WDFN Exposed Pad
RoHSROHS3 Compliant
SeriesU-MOSVI
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

SSM6J501NU,LF specifications
ParameterValue
SeriesU-MOSVI
FET typeP-Channel
MountingSurface Mount
Drain to source voltage20 V
Drive voltage (Max rds on, min rds on)1.5V, 4.5V
Current - continuous drain (Id) @ 25°C10A (Ta)
Power dissipation1W (Ta)
Operating temperature150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±8V
TechnologyMOSFET (Metal Oxide)
Case6-WDFN Exposed Pad
Vgs(th) (Max) @ id1V @ 1mA
Rds on (Max) @ id, vgs15.3mOhm @ 4A, 4.5V
Gate charge (Qg) (Max) @ vgs29.9 nC @ 4.5 V
Input capacitance (Ciss) (Max) @ vds2600 pF @ 10 V