SSM6J414TU,LF
Toshiba Semiconductor · U-MOSVI Series
MOSFET P CH 20V 6A UF6
[IN STOCK] In Stock: 1,440 pcs
MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T
Technical specifications
| Parameter / Attribute | Specification / Value |
|---|---|
| Series | U-MOSVI |
| FET type | P-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 20 V |
| Drive voltage (Max rds on, min rds on) | 1.5V, 4.5V |
| Current - continuous drain (Id) @ 25°C | 6A (Ta) |
| Power dissipation | 1W (Ta) |
| Operating temperature | 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±8V |
| Technology | MOSFET (Metal Oxide) |
| Case | 6-SMD, Flat Leads |
| Vgs(th) (Max) @ id | 1V @ 1mA |
| Rds on (Max) @ id, vgs | 22.5mOhm @ 6A, 4.5V |
| Gate charge (Qg) (Max) @ vgs | 23.1 nC @ 4.5 V |
| Input capacitance (Ciss) (Max) @ vds | 1650 pF @ 10 V |
SSM6J414TU,LF
[ALLOC] verified