SSM6J402TU,LF

Toshiba Semiconductor

MOSFET P-CH 30V 2A UF6

Toshiba Semiconductor SSM6J402TU,LF
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MOQ 5 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

SSM6J402TU,LF specifications
Parameter / AttributeSpecification / Value
FET typeP-Channel
MountingSurface Mount
Drain to source voltage30 V
Drive voltage (Max rds on, min rds on)4V, 10V
Current - continuous drain (Id) @ 25°C2A (Ta)
Power dissipation500mW (Ta)
Operating temperature150°C
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
Case6-SMD, Flat Leads
Vgs(th) (Max) @ id2.6V @ 1mA
Rds on (Max) @ id, vgs117mOhm @ 1A, 10V
Gate charge (Qg) (Max) @ vgs5.3 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds280 pF @ 15 V
SSM6J402TU,LF
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