Toshiba Semiconductor SSM6J216FE,LF
MPNSSM6J216FE,LF
End of Life
MOSFET P-CHANNEL 12V 4.8A ES6
$0.5Ref. price · indicative, final on quote
PackagingSOT-563, SOT-666
RoHSROHS3 Compliant
SeriesU-MOSVI
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| Series | U-MOSVI |
| FET type | P-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 12 V |
| Drive voltage (Max rds on, min rds on) | 1.5V, 4.5V |
| Current - continuous drain (Id) @ 25°C | 4.8A (Ta) |
| Power dissipation | 700mW (Ta) |
| Operating temperature | 150°C |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±8V |
| Technology | MOSFET (Metal Oxide) |
| Case | SOT-563, SOT-666 |
| Vgs(th) (Max) @ id | 1V @ 1mA |
| Rds on (Max) @ id, vgs | 32mOhm @ 3.5A, 4.5V |
| Gate charge (Qg) (Max) @ vgs | 12.7 nC @ 4.5 V |
| Input capacitance (Ciss) (Max) @ vds | 1040 pF @ 12 V |