SSM6J214FE~1TE85L~6F
Toshiba Semiconductor SSM6J214FE(TE85L,F
MPNSSM6J214FE(TE85L,F
End of Life
MOSFET P-CH 30V 3.6A ES6
$0.39Ref. price · indicative, final on quote
PackagingSOT-563, SOT-666
RoHSROHS3 Compliant
SeriesU-MOSVI
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| Series | U-MOSVI |
| FET type | P-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 30 V |
| Drive voltage (Max rds on, min rds on) | 1.8V, 10V |
| Current - continuous drain (Id) @ 25°C | 3.6A (Ta) |
| Power dissipation | 500mW (Ta) |
| Operating temperature | 150°C |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±12V |
| Technology | MOSFET (Metal Oxide) |
| Case | SOT-563, SOT-666 |
| Vgs(th) (Max) @ id | 1.2V @ 1mA |
| Rds on (Max) @ id, vgs | 50mOhm @ 3A, 10V |
| Gate charge (Qg) (Max) @ vgs | 7.9 nC @ 4.5 V |
| Input capacitance (Ciss) (Max) @ vds | 560 pF @ 15 V |