Toshiba Semiconductor SSM6H19NU,LF
MPNSSM6H19NU,LF
End of Life
MOSFET N-CH 40V 2A 6UDFN
$0.36Ref. price · indicative, final on quote
Packaging6-UDFN Exposed Pad
RoHSROHS3 Compliant
SeriesU-MOSVII-H
Sourced new & surplus through independent channelsAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| Series | U-MOSVII-H |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 40 V |
| Drive voltage (Max rds on, min rds on) | 1.8V, 8V |
| Current - continuous drain (Id) @ 25°C | 2A (Ta) |
| Power dissipation | 1W (Ta) |
| Operating temperature | 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±12V |
| Technology | MOSFET (Metal Oxide) |
| Case | 6-UDFN Exposed Pad |
| Vgs(th) (Max) @ id | 1.2V @ 1mA |
| Rds on (Max) @ id, vgs | 185mOhm @ 1A, 8V |
| Gate charge (Qg) (Max) @ vgs | 2.2 nC @ 4.2 V |
| Input capacitance (Ciss) (Max) @ vds | 130 pF @ 10 V |