Toshiba Semiconductor SSM6G18NU,LF
MPNSSM6G18NU,LF
End of Life
MOSFET P-CH 20V 2A 6UDFN
$0.47Ref. price · indicative, final on quote
Packaging6-WDFN Exposed Pad
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| FET type | P-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 20 V |
| Drive voltage (Max rds on, min rds on) | 1.5V, 4.5V |
| Current - continuous drain (Id) @ 25°C | 2A (Ta) |
| Power dissipation | 1W (Ta) |
| Operating temperature | 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±8V |
| Technology | MOSFET (Metal Oxide) |
| FET feature | Schottky Diode (Isolated) |
| Case | 6-WDFN Exposed Pad |
| Vgs(th) (Max) @ id | 1V @ 1mA |
| Rds on (Max) @ id, vgs | 112mOhm @ 1A, 4.5V |
| Gate charge (Qg) (Max) @ vgs | 4.6 nC @ 4.5 V |
| Input capacitance (Ciss) (Max) @ vds | 270 pF @ 10 V |