SSM5N15FU,LF

Toshiba Semiconductor · π-MOSVI Series

MOSFET N-CH 30V 100MA USV

Toshiba Semiconductor SSM5N15FU,LF
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MOQ 5 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

SSM5N15FU,LF specifications
Parameter / AttributeSpecification / Value
Seriesπ-MOSVI
FET typeN-Channel
MountingSurface Mount
Drain to source voltage30 V
Drive voltage (Max rds on, min rds on)2.5V, 4V
Current - continuous drain (Id) @ 25°C100mA (Ta)
Power dissipation200mW (Ta)
Operating temperature150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
Case5-TSSOP, SC-70-5, SOT-353
Rds on (Max) @ id, vgs4Ohm @ 10mA, 4V
Input capacitance (Ciss) (Max) @ vds7.8 pF @ 3 V
SSM5N15FU,LF
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