SSM5H90ATU,LF
Toshiba Semiconductor
MOSFET N-CH 20V 2.4A UFV
[IN STOCK] In Stock: 49 pcs
MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T
Technical specifications
| Parameter / Attribute | Specification / Value |
|---|---|
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 20 V |
| Drive voltage (Max rds on, min rds on) | 2.5V, 4V |
| Current - continuous drain (Id) @ 25°C | 2.4A (Ta) |
| Power dissipation | 500mW (Ta) |
| Operating temperature | 150°C |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±10V |
| Technology | MOSFET (Metal Oxide) |
| Case | 5-SMD, Flat Leads |
| Vgs(th) (Max) @ id | 1.2V @ 1mA |
| Rds on (Max) @ id, vgs | 65mOhm @ 1.5A, 4V |
| Gate charge (Qg) (Max) @ vgs | 2.2 nC @ 4 V |
| Input capacitance (Ciss) (Max) @ vds | 200 pF @ 10 V |
SSM5H90ATU,LF
[ALLOC] verified