SSM3K62TU,LXHF

Toshiba Semiconductor · Automotive, AEC-Q101, U-MOSVII-H Series

SMOS LOW RON NCH VDSS:20V ID:0.8

Toshiba Semiconductor SSM3K62TU,LXHF
Download datasheet (PDF)
[IN STOCK] In Stock: 80 pcs
$0.71/ pc

Volume pricing

Buy Now

MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

SSM3K62TU,LXHF specifications
Parameter / AttributeSpecification / Value
SeriesAutomotive, AEC-Q101, U-MOSVII-H
FET typeN-Channel
MountingSurface Mount
Drain to source voltage20 V
Drive voltage (Max rds on, min rds on)1.2V, 4.5V
Current - continuous drain (Id) @ 25°C800mA (Ta)
Power dissipation500mW (Ta)
Operating temperature150°C
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±8V
TechnologyMOSFET (Metal Oxide)
Case3-SMD, Flat Lead
Vgs(th) (Max) @ id1V @ 1mA
Rds on (Max) @ id, vgs57mOhm @ 800mA, 4.5V
Gate charge (Qg) (Max) @ vgs2 nC @ 4.5 V
Input capacitance (Ciss) (Max) @ vds177 pF @ 10 V
SSM3K62TU,LXHF
[ALLOC] verified
Quote