SSM3K37MFV,L3F

Toshiba Semiconductor · U-MOSIII Series

MOSFET N-CH 20V 250MA VESM

Toshiba Semiconductor SSM3K37MFV,L3F
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MOQ 10 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

SSM3K37MFV,L3F specifications
Parameter / AttributeSpecification / Value
SeriesU-MOSIII
FET typeN-Channel
MountingSurface Mount
Drain to source voltage20 V
Drive voltage (Max rds on, min rds on)1.5V, 4.5V
Current - continuous drain (Id) @ 25°C250mA (Ta)
Power dissipation150mW (Ta)
Operating temperature150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±10V
TechnologyMOSFET (Metal Oxide)
CaseSOT-723
Vgs(th) (Max) @ id1V @ 1mA
Rds on (Max) @ id, vgs2.2Ohm @ 100mA, 4.5V
Input capacitance (Ciss) (Max) @ vds12 pF @ 10 V
SSM3K37MFV,L3F
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