SSM3K361TU,LF

Toshiba Semiconductor · U-MOSVIII-H Series

MOSFET N-CH 100V 3.5A UFM

Toshiba Semiconductor SSM3K361TU,LF
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MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

SSM3K361TU,LF specifications
Parameter / AttributeSpecification / Value
SeriesU-MOSVIII-H
FET typeN-Channel
MountingSurface Mount
Drain to source voltage100 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C3.5A (Ta)
Power dissipation1W (Ta)
Operating temperature175°C
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
Case3-SMD, Flat Lead
Vgs(th) (Max) @ id2.5V @ 100µA
Rds on (Max) @ id, vgs69mOhm @ 2A, 10V
Gate charge (Qg) (Max) @ vgs3.2 nC @ 4.5 V
Input capacitance (Ciss) (Max) @ vds430 pF @ 15 V
SSM3K361TU,LF
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