SSM3K35AMFV,L3F
Toshiba Semiconductor · U-MOSIII Series
MOSFET N-CH 20V 250MA VESM
[IN STOCK] In Stock: 9,820 pcs
MOQ 10 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T
Technical specifications
| Parameter / Attribute | Specification / Value |
|---|---|
| Series | U-MOSIII |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 20 V |
| Drive voltage (Max rds on, min rds on) | 1.2V, 4.5V |
| Current - continuous drain (Id) @ 25°C | 250mA (Ta) |
| Power dissipation | 500mW (Ta) |
| Operating temperature | 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±10V |
| Technology | MOSFET (Metal Oxide) |
| Case | SOT-723 |
| Vgs(th) (Max) @ id | 1V @ 100µA |
| Rds on (Max) @ id, vgs | 1.1Ohm @ 150mA, 4.5V |
| Gate charge (Qg) (Max) @ vgs | 0.34 nC @ 4.5 V |
| Input capacitance (Ciss) (Max) @ vds | 36 pF @ 10 V |
SSM3K35AMFV,L3F
[ALLOC] verified