SSM3K2615TU,LF

Toshiba Semiconductor · π-MOSV Series

MOSFET N-CH 60V 2A UFM

Toshiba Semiconductor SSM3K2615TU,LF
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MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

SSM3K2615TU,LF specifications
Parameter / AttributeSpecification / Value
Seriesπ-MOSV
FET typeN-Channel
MountingSurface Mount
Drain to source voltage60 V
Drive voltage (Max rds on, min rds on)3.3V, 10V
Current - continuous drain (Id) @ 25°C2A (Ta)
Power dissipation800mW (Ta)
Operating temperature150°C
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
Case3-SMD, Flat Leads
Vgs(th) (Max) @ id2V @ 1mA
Rds on (Max) @ id, vgs300mOhm @ 1A, 10V
Gate charge (Qg) (Max) @ vgs6 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds150 pF @ 10 V
SSM3K2615TU,LF
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