SSM3K16FU,LF

Toshiba Semiconductor · π-MOSVI Series

MOSFET N-CH 20V 100MA USM

Toshiba Semiconductor SSM3K16FU,LF
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MOQ 5 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

SSM3K16FU,LF specifications
Parameter / AttributeSpecification / Value
Seriesπ-MOSVI
FET typeN-Channel
MountingSurface Mount
Drain to source voltage20 V
Drive voltage (Max rds on, min rds on)1.5V, 4V
Current - continuous drain (Id) @ 25°C100mA (Ta)
Power dissipation150mW (Ta)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±10V
TechnologyMOSFET (Metal Oxide)
CaseSC-70, SOT-323
Vgs(th) (Max) @ id1.1V @ 100µA
Rds on (Max) @ id, vgs3Ohm @ 10mA, 4V
Input capacitance (Ciss) (Max) @ vds9.3 pF @ 3 V
SSM3K16FU,LF
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