SSM3K15AFU,LF

Toshiba Semiconductor · U-MOSIII Series

MOSFET N-CH 30V 100MA USM

Toshiba Semiconductor SSM3K15AFU,LF
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MOQ 10 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

SSM3K15AFU,LF specifications
Parameter / AttributeSpecification / Value
SeriesU-MOSIII
FET typeN-Channel
MountingSurface Mount
Drain to source voltage30 V
Drive voltage (Max rds on, min rds on)2.5V, 4V
Current - continuous drain (Id) @ 25°C100mA (Ta)
Power dissipation150mW (Ta)
Operating temperature150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseSC-70, SOT-323
Vgs(th) (Max) @ id1.5V @ 100µA
Rds on (Max) @ id, vgs3.6Ohm @ 10mA, 4V
Input capacitance (Ciss) (Max) @ vds13.5 pF @ 3 V
SSM3K15AFU,LF
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