SSM3K123TU,LF
Toshiba Semiconductor · U-MOSIII Series
MOSFET N-CH 20V 4.2A UFM
[IN STOCK] In Stock: 1,335 pcs
MOQ 5 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T
Technical specifications
| Parameter / Attribute | Specification / Value |
|---|---|
| Series | U-MOSIII |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 20 V |
| Drive voltage (Max rds on, min rds on) | 1.5V, 4V |
| Current - continuous drain (Id) @ 25°C | 4.2A (Ta) |
| Power dissipation | 500mW (Ta) |
| Operating temperature | 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±10V |
| Technology | MOSFET (Metal Oxide) |
| Case | 3-SMD, Flat Leads |
| Vgs(th) (Max) @ id | 1V @ 1mA |
| Rds on (Max) @ id, vgs | 28mOhm @ 3A, 4V |
| Gate charge (Qg) (Max) @ vgs | 13.6 nC @ 4 V |
| Input capacitance (Ciss) (Max) @ vds | 1010 pF @ 10 V |
SSM3K123TU,LF
[ALLOC] verified