SSM3J35CT,L3F
Toshiba Semiconductor · π-MOSVI Series
MOSFET P-CHANNEL 20V 100MA CST3
[IN STOCK] In Stock: 380 pcs
MOQ 5 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T
Technical specifications
| Parameter / Attribute | Specification / Value |
|---|---|
| Series | π-MOSVI |
| FET type | P-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 20 V |
| Drive voltage (Max rds on, min rds on) | 1.2V, 4V |
| Current - continuous drain (Id) @ 25°C | 100mA (Ta) |
| Power dissipation | 100mW (Ta) |
| Operating temperature | 150°C |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±10V |
| Technology | MOSFET (Metal Oxide) |
| Case | SC-101, SOT-883 |
| Vgs(th) (Max) @ id | 1V @ 1mA |
| Rds on (Max) @ id, vgs | 8Ohm @ 50mA, 4V |
| Input capacitance (Ciss) (Max) @ vds | 12.2 pF @ 3 V |
SSM3J35CT,L3F
[ALLOC] verified