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Toshiba Semiconductor SSM3J356R,LF

Toshiba Semiconductor SSM3J356R,LF

MPNSSM3J356R,LF
End of Life

MOSFET P-CH 60V 2A SOT-23F

$0.6Ref. price · indicative, final on quote
PackagingSOT-23-3 Flat Leads
RoHSROHS3 Compliant
SeriesU-MOSVI
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

SSM3J356R,LF specifications
ParameterValue
SeriesU-MOSVI
FET typeP-Channel
MountingSurface Mount
Drain to source voltage60 V
Drive voltage (Max rds on, min rds on)4V, 10V
Current - continuous drain (Id) @ 25°C2A (Ta)
Power dissipation1W (Ta)
Operating temperature150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs+10V, -20V
TechnologyMOSFET (Metal Oxide)
CaseSOT-23-3 Flat Leads
Vgs(th) (Max) @ id2V @ 1mA
Rds on (Max) @ id, vgs300mOhm @ 1A, 10V
Gate charge (Qg) (Max) @ vgs8.3 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds330 pF @ 10 V