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Toshiba Semiconductor SSM3J353F,LF

Toshiba Semiconductor SSM3J353F,LF

MPNSSM3J353F,LF
End of Life

MOSFET P-CH 30V 2A S-MINI

$0.47Ref. price · indicative, final on quote
PackagingTO-236-3, SC-59, SOT-23-3
RoHSROHS3 Compliant
SeriesU-MOSVI
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

SSM3J353F,LF specifications
ParameterValue
SeriesU-MOSVI
FET typeP-Channel
MountingSurface Mount
Drain to source voltage30 V
Drive voltage (Max rds on, min rds on)4V, 10V
Current - continuous drain (Id) @ 25°C2A (Ta)
Power dissipation600mW (Ta)
Operating temperature150°C
PackageTape & Reel (TR); Cut Tape (CT)
Vgs+20V, -25V
TechnologyMOSFET (Metal Oxide)
CaseTO-236-3, SC-59, SOT-23-3
Vgs(th) (Max) @ id2.2V @ 250µA
Rds on (Max) @ id, vgs150mOhm @ 2A, 10V
Gate charge (Qg) (Max) @ vgs3.4 nC @ 4.5 V
Input capacitance (Ciss) (Max) @ vds159 pF @ 15 V