SSM3J353F,LF
Toshiba Semiconductor · U-MOSVI Series
MOSFET P-CH 30V 2A S-MINI
[IN STOCK] In Stock: 40 pcs
MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T
Technical specifications
| Parameter / Attribute | Specification / Value |
|---|---|
| Series | U-MOSVI |
| FET type | P-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 30 V |
| Drive voltage (Max rds on, min rds on) | 4V, 10V |
| Current - continuous drain (Id) @ 25°C | 2A (Ta) |
| Power dissipation | 600mW (Ta) |
| Operating temperature | 150°C |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | +20V, -25V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-236-3, SC-59, SOT-23-3 |
| Vgs(th) (Max) @ id | 2.2V @ 250µA |
| Rds on (Max) @ id, vgs | 150mOhm @ 2A, 10V |
| Gate charge (Qg) (Max) @ vgs | 3.4 nC @ 4.5 V |
| Input capacitance (Ciss) (Max) @ vds | 159 pF @ 15 V |
SSM3J353F,LF
[ALLOC] verified