SSM3J352F,LF
Toshiba Semiconductor · U-MOSVI Series
MOSFET P-CH 20V 2A S-MINI
[IN STOCK] In Stock: 100 pcs
MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T
Technical specifications
| Parameter / Attribute | Specification / Value |
|---|---|
| Series | U-MOSVI |
| FET type | P-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 20 V |
| Drive voltage (Max rds on, min rds on) | 1.8V, 10V |
| Current - continuous drain (Id) @ 25°C | 2A (Ta) |
| Power dissipation | 1.2W (Ta) |
| Operating temperature | 150°C |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±12V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-236-3, SC-59, SOT-23-3 |
| Vgs(th) (Max) @ id | 1.2V @ 1mA |
| Rds on (Max) @ id, vgs | 110mOhm @ 2A, 10V |
| Gate charge (Qg) (Max) @ vgs | 5.1 nC @ 4.5 V |
| Input capacitance (Ciss) (Max) @ vds | 210 pF @ 10 V |
SSM3J352F,LF
[ALLOC] verified