SSM3J338R,LF

Toshiba Semiconductor · U-MOSVII Series

MOSFET P-CH 12V 6A SOT23F

Toshiba Semiconductor SSM3J338R,LF
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MOQ 5 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

SSM3J338R,LF specifications
Parameter / AttributeSpecification / Value
SeriesU-MOSVII
FET typeP-Channel
MountingSurface Mount
Drain to source voltage12 V
Drive voltage (Max rds on, min rds on)1.8V, 8V
Current - continuous drain (Id) @ 25°C6A (Ta)
Power dissipation1W (Ta)
Operating temperature150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±10V
TechnologyMOSFET (Metal Oxide)
CaseSOT-23-3 Flat Leads
Vgs(th) (Max) @ id1V @ 1mA
Rds on (Max) @ id, vgs17.6mOhm @ 6A, 8V
Gate charge (Qg) (Max) @ vgs19.5 nC @ 4.5 V
Input capacitance (Ciss) (Max) @ vds1400 pF @ 6 V
SSM3J338R,LF
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