SSM3J15FV,L3F
Toshiba Semiconductor · π-MOSVI Series
MOSFET P-CH 30V 100MA VESM
[IN STOCK] In Stock: 600 pcs
MOQ 10 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T
Technical specifications
| Parameter / Attribute | Specification / Value |
|---|---|
| Series | π-MOSVI |
| FET type | P-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 30 V |
| Drive voltage (Max rds on, min rds on) | 2.5V, 4V |
| Current - continuous drain (Id) @ 25°C | 100mA (Ta) |
| Power dissipation | 150mW (Ta) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | SOT-723 |
| Vgs(th) (Max) @ id | 1.7V @ 100µA |
| Rds on (Max) @ id, vgs | 12Ohm @ 10mA, 4V |
| Input capacitance (Ciss) (Max) @ vds | 9.1 pF @ 3 V |
SSM3J15FV,L3F
[ALLOC] verified